The three-dimensional (3D) nanoscale structure of III-As nanowires is correlated with optical and electronic property measurements to deconvolve the contributions of strain, composition, and crystal structure to characteristics of interest for future electronic and optoelectronic devices. Multiple advanced two-dimensional (2D) and 3D characterization techniques are employed such as atom probe...
Atom probe tomography (APT) was used to analyze doping and alloying in low-dimensional electronic materials including thin film heterostructures, van der Waals materials, and colloidal quantum dots (QDs).
Firstly, APT was used to reveal structure-property relationship for low-dimensional thin film semiconductors used in electronic and opto-electronic devices. APT was shown...