The purpose of this study is to characterize the nanometer-scale structure of an Al2O3- W-Ge multilayer utilizing x-ray reflectivity. Attributes such as layer thickness, density, surface, and interface roughness are determined and explained. The reasons for using this particular multilayer are also reviewed, as well as the benefits to science and the semiconductor industry

Last modified

• 07/18/2018

Creator

• Michael Bedzyk
• Phillip Lin
• Michael Larkin

DOI

• https://doi.org/10.21985/N24X5Z

Keyword

• Volume 4

Date created

• 2007

Resource type

• Article

Rights statement

• In Copyright